Block copolymer multiple patterning integrated with conventional ArF lithography

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dc.contributor.authorPark, Seung-Hakko
dc.contributor.authorShin, Dong-Okko
dc.contributor.authorKim, Bong-Hoonko
dc.contributor.authorYoon, Dong-Kiko
dc.contributor.authorKim, Kyoung-Seonko
dc.contributor.authorLee, Si-Yongko
dc.contributor.authorOh, Seok-Hwanko
dc.contributor.authorChoi, Seong-Woonko
dc.contributor.authorJeon, Sang-Chulko
dc.contributor.authorKim, Sang-Oukko
dc.date.accessioned2011-03-17T08:20:59Z-
dc.date.available2011-03-17T08:20:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-
dc.identifier.citationSOFT MATTER, v.6, no.1, pp.120 - 125-
dc.identifier.issn1744-683X-
dc.identifier.urihttp://hdl.handle.net/10203/22754-
dc.description.abstractWe present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.-
dc.description.sponsorshipThis work was financially supported by the second stage of the Brain Korea 21 Project, the National Research Laboratory Program (R0A-2008-000-20057-0), the Engineering Research Center (R11-2008-058-03002-0), KAIST EEWS initiatives (EEWS0903) and the Fundamental R&D Program for Core Technology of Materials funded by the Korean government (MEST, MKE).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectCARBON NANOTUBE ARRAYS-
dc.subjectDIBLOCK COPOLYMER-
dc.subjectTEMPLATES-
dc.subjectGRAPHOEPITAXY-
dc.subjectMEDIA-
dc.titleBlock copolymer multiple patterning integrated with conventional ArF lithography-
dc.typeArticle-
dc.identifier.wosid000272843200010-
dc.identifier.scopusid2-s2.0-72949122991-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.issue1-
dc.citation.beginningpage120-
dc.citation.endingpage125-
dc.citation.publicationnameSOFT MATTER-
dc.identifier.doi10.1039/b913853f-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYoon, Dong-Ki-
dc.contributor.localauthorKim, Sang-Ouk-
dc.contributor.nonIdAuthorKim, Kyoung-Seon-
dc.contributor.nonIdAuthorLee, Si-Yong-
dc.contributor.nonIdAuthorOh, Seok-Hwan-
dc.contributor.nonIdAuthorChoi, Seong-Woon-
dc.contributor.nonIdAuthorJeon, Sang-Chul-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCARBON NANOTUBE ARRAYS-
dc.subject.keywordPlusDIBLOCK COPOLYMER-
dc.subject.keywordPlusTEMPLATES-
dc.subject.keywordPlusGRAPHOEPITAXY-
dc.subject.keywordPlusMEDIA-
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