The effects of external optical feedback on the power penalty of DFB-LD modules for 2.5 Gb s(-1) optical transmission systems

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dc.contributor.authorPark, KHko
dc.contributor.authorLee, JKko
dc.contributor.authorHan, HSko
dc.contributor.authorJang, DHko
dc.contributor.authorPark, Chul Soonko
dc.contributor.authorPyun, KEko
dc.contributor.authorJICHAI JEONGko
dc.date.accessioned2017-12-05T02:09:50Z-
dc.date.available2017-12-05T02:09:50Z-
dc.date.created2017-01-13-
dc.date.created2017-01-13-
dc.date.issued1998-01-
dc.identifier.citationOPTICAL AND QUANTUM ELECTRONICS, v.30, no.1, pp.23 - 31-
dc.identifier.issn0306-8919-
dc.identifier.urihttp://hdl.handle.net/10203/227529-
dc.description.abstractWe report the effects of external optical feedback on the power penalty of commercial distributed feedback laser diode (DFB-LD) modules for 2.5 Gb s(-1) optical transmission systems. External optical feedback presented to the DFB-LD modules causes the excitation of external cavity modes, resulting in increased relative intensity noise (RIN) and intensity noise ripples at low frequency region below 500 MHz. For a 10(-10) bit error rate (BER), the minimum power penalty is as much as 1.25 dB for a feedback ratio of -8.8 dB. An excess power penalty of 0.5 dB per 3 dB increase in the feedback ratio was also empirically obtained. We suggest that optical isolators in 2.5 Gb s DFB-LD modules used in conventional optical transmission systems or WDM systems must have a peak isolation ratio of better than 54.5 dB, instead of the previously recommended 30 dB, for negligible power penalty induced by external optical feedback.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectSEMICONDUCTOR-LASERS-
dc.subjectINTENSITY FLUCTUATION-
dc.subjectDIODES-
dc.subjectNOISE-
dc.titleThe effects of external optical feedback on the power penalty of DFB-LD modules for 2.5 Gb s(-1) optical transmission systems-
dc.typeArticle-
dc.identifier.wosid000072063900003-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.issue1-
dc.citation.beginningpage23-
dc.citation.endingpage31-
dc.citation.publicationnameOPTICAL AND QUANTUM ELECTRONICS-
dc.identifier.doi10.1023/A:1006910607553-
dc.contributor.localauthorPark, Chul Soon-
dc.contributor.nonIdAuthorPark, KH-
dc.contributor.nonIdAuthorLee, JK-
dc.contributor.nonIdAuthorHan, HS-
dc.contributor.nonIdAuthorJang, DH-
dc.contributor.nonIdAuthorPyun, KE-
dc.contributor.nonIdAuthorJICHAI JEONG-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSEMICONDUCTOR-LASERS-
dc.subject.keywordPlusINTENSITY FLUCTUATION-
dc.subject.keywordPlusDIODES-
dc.subject.keywordPlusNOISE-
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