DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jinsung | ko |
dc.contributor.author | Jo, Seong-June | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.contributor.author | Song, Song-in | ko |
dc.date.accessioned | 2007-12-03T06:22:10Z | - |
dc.date.available | 2007-12-03T06:22:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-05 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.46, no.5, pp.651 - 654 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/2271 | - |
dc.description.abstract | Long wavelength infrared absorption characteristics of an ln(0.3)Ga(0.7)As/GaAs quantum well infrared photodetector (QWIP) employing an n-i-p-i-n camel diode structure were compared with those of a conventional n-QWIP. QWIPs showed a photocurrent response peak at the wavelength of approximately 10 mum due to electronic intersubband transitions in quantum wells. The QWIP employing the camel diode structure showed a reduced dark current. an increased responsivityrid thus all improved detectivity compared with those of the conventional n-QWlP due to the presence of the n-i-p-i-n camel barrier. The results indicated the potential of the QWIP employing an n-i-p-i-n camel diode structure for use in infrared detectors operating at elevated operating temperature. (C) 2002 Elsevier Science Ltd. All rights reserved. | - |
dc.description.sponsorship | This work was supported, in part, by KISTEP (under Nano Structure Technology Projects), MOST-UFON( ERC), and MOE-BK21 programs. The authors would like to thank J.K. Kim, S.S. Ko, and I.H. Kang for their technical assistance. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | ABSORPTION | - |
dc.subject | NOISE | - |
dc.subject | GAIN | - |
dc.title | Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000175658000007 | - |
dc.identifier.scopusid | 2-s2.0-0036568236 | - |
dc.type.rims | ART | - |
dc.citation.volume | 46 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 651 | - |
dc.citation.endingpage | 654 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/S0038-1101(01)00334-3 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Park, Jinsung | - |
dc.contributor.nonIdAuthor | Jo, Seong-June | - |
dc.contributor.nonIdAuthor | Song, Song-in | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | quantum well infrared photodetector | - |
dc.subject.keywordAuthor | camel diode structure | - |
dc.subject.keywordAuthor | dark current | - |
dc.subject.keywordAuthor | detectivity | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordPlus | GAIN | - |
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