Tunnelling field effect transistor based on highly p-doped silicon and MoS2 heterostructure

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dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorKoo, BonDaeko
dc.contributor.authorPark, Haminko
dc.contributor.authorWoo YoungJunko
dc.contributor.authorLEE, JAEEUNko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2017-10-23T01:47:15Z-
dc.date.available2017-10-23T01:47:15Z-
dc.date.created2017-10-10-
dc.date.created2017-10-10-
dc.date.created2017-10-10-
dc.date.issued2017-09-25-
dc.identifier.citationGraphene Week 2017-
dc.identifier.urihttp://hdl.handle.net/10203/226355-
dc.languageEnglish-
dc.publisherGraphene Week 2017-
dc.titleTunnelling field effect transistor based on highly p-doped silicon and MoS2 heterostructure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameGraphene Week 2017-
dc.identifier.conferencecountryGR-
dc.identifier.conferencelocationDivani Caravel Hotel, Athens-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorKoo, BonDae-
dc.contributor.nonIdAuthorWoo YoungJun-
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EE-Conference Papers(학술회의논문)
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