DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Myeong-Cheol | ko |
dc.contributor.author | Choi, Kyung Cheol | ko |
dc.date.accessioned | 2017-08-31T08:59:52Z | - |
dc.date.available | 2017-08-31T08:59:52Z | - |
dc.date.created | 2017-08-28 | - |
dc.date.created | 2017-08-28 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3508 - 3510 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225600 | - |
dc.description.abstract | We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layerelectrodethat is transparentand flexible and an Al2O3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al2O3 layer andmultithin- layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | RRAM DEVICES | - |
dc.title | Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000406268900069 | - |
dc.identifier.scopusid | 2-s2.0-85023782921 | - |
dc.type.rims | ART | - |
dc.citation.volume | 64 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 3508 | - |
dc.citation.endingpage | 3510 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2017.2716831 | - |
dc.contributor.localauthor | Choi, Kyung Cheol | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Flexible | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | multilayer electrode | - |
dc.subject.keywordAuthor | resistive | - |
dc.subject.keywordAuthor | transparent | - |
dc.subject.keywordPlus | RRAM DEVICES | - |
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