DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jekyung | ko |
dc.contributor.author | Park, Sanghyun | ko |
dc.contributor.author | Ryu, Sangwoo | ko |
dc.contributor.author | Oh, Jihun | ko |
dc.contributor.author | Shin, Byungha | ko |
dc.date.accessioned | 2017-05-15T05:19:10Z | - |
dc.date.available | 2017-05-15T05:19:10Z | - |
dc.date.created | 2017-05-02 | - |
dc.date.created | 2017-05-02 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | PROGRESS IN PHOTOVOLTAICS, v.25, no.4, pp.308 - 317 | - |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223686 | - |
dc.description.abstract | This study reports on substantial improvement of the open-circuit voltage (V-oc) of Cu2ZnSnSe4 (CZTSe) thin film solar cells by applying a passivation strategy to both the top and bottom interfaces of the CZTSe absorber, which involves insertion of a thin dielectric layer between the CZTSe and the surrounding layers. The study also presents in-depth material characterizations using transmission electron microscopy, energy dispersive X-ray spectroscopy, low-temperature photoluminescence, and secondary ion mass spectrometry, to reveal the effects of the interface passivation. To passivate the bottom Mo/CZTSe interface, a dielectric layer with patterned local contacts of dimensions down to similar to 100nm was prepared using nanosphere lithography. With this, the V-oc, short-circuit current, and fill factor (FF) were significantly enhanced due to reduction in carrier recombination at the bottom Mo/CZTSe interface. The top CZTSe/CdS interface was passivated by a thin dielectric layer which prevented inter-diffusion of Cd and Cu at the top interface, thereby improving the junction quality. Application of the top passivation layers resulted in substantial improvement in V-oc and FF, thereby achieving the V-oc deficit of 0.542V which is the record value among reported CZTSe solar cells. Copyright (c) 2017 John Wiley & Sons, Ltd. | - |
dc.language | English | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.subject | BATH DEPOSITION PROCESS | - |
dc.subject | SURFACE PASSIVATION | - |
dc.subject | EFFICIENCY | - |
dc.subject | LAYER | - |
dc.subject | PRECURSORS | - |
dc.subject | EMITTER | - |
dc.subject | CDS | - |
dc.subject | SI | - |
dc.title | Improving the open-circuit voltage of Cu2ZnSnSe4 thin film solar cells via interface passivation | - |
dc.type | Article | - |
dc.identifier.wosid | 000397566200004 | - |
dc.identifier.scopusid | 2-s2.0-85011664713 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 308 | - |
dc.citation.endingpage | 317 | - |
dc.citation.publicationname | PROGRESS IN PHOTOVOLTAICS | - |
dc.identifier.doi | 10.1002/pip.2864 | - |
dc.contributor.localauthor | Oh, Jihun | - |
dc.contributor.localauthor | Shin, Byungha | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cu2ZnSnSe4 | - |
dc.subject.keywordAuthor | thin film solar cells | - |
dc.subject.keywordAuthor | interface passivation | - |
dc.subject.keywordAuthor | local contact holes | - |
dc.subject.keywordPlus | BATH DEPOSITION PROCESS | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | EMITTER | - |
dc.subject.keywordPlus | CDS | - |
dc.subject.keywordPlus | SI | - |
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