DC Field | Value | Language |
---|---|---|
dc.contributor.author | Im, Dong Hyun | ko |
dc.contributor.author | Kim, Yong In | ko |
dc.contributor.author | Jeong, Myoungho | ko |
dc.contributor.author | Park, Kwang Wuk | ko |
dc.contributor.author | Kim, Sung Kyu | ko |
dc.contributor.author | Yuk, Jong Min | ko |
dc.contributor.author | Nam, Woo Hyun | ko |
dc.contributor.author | Kim, Sang Yun | ko |
dc.contributor.author | Lee, Kong-Soo | ko |
dc.contributor.author | Im, Ki-Vin | ko |
dc.contributor.author | Lim, Hanjin | ko |
dc.contributor.author | Lee, Jeong Yong | ko |
dc.date.accessioned | 2017-05-15T05:17:38Z | - |
dc.date.available | 2017-05-15T05:17:38Z | - |
dc.date.created | 2017-05-02 | - |
dc.date.created | 2017-05-02 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3370 - 3374 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223655 | - |
dc.description.abstract | The planar defect behavior and phosphorus (P) diffusion of P-doped silicon (Si) thin film on monocrystalline Si with annealing was investigated by high-resolution transmission electron microscopy. These images indicate that the as-deposited Si thin film crystallizes with many planar defects, such as stacking faults and twin boundaries. Secondary ion mass spectroscopy and atom probe tomography reveal that P atoms are segregated to the planar defects and diffuse out the Si substrate at 600 degrees C. The solubility of P atoms has an influence on the rearrangement of Si atoms, which leads to the annihilation of the defects in the deposited si thin flim | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | STACKING-FAULTS | - |
dc.subject | EPITAXIAL LAYER | - |
dc.subject | HEAT-TREATMENT | - |
dc.subject | ELIMINATION | - |
dc.title | Annihilation Behavior of Planar Defects on Phosphorus-Doped Silicon at Low Temperatures | - |
dc.type | Article | - |
dc.identifier.wosid | 000397855000086 | - |
dc.identifier.scopusid | 2-s2.0-85015357756 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 3370 | - |
dc.citation.endingpage | 3374 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2017.14021 | - |
dc.contributor.localauthor | Yuk, Jong Min | - |
dc.contributor.localauthor | Lee, Jeong Yong | - |
dc.contributor.nonIdAuthor | Park, Kwang Wuk | - |
dc.contributor.nonIdAuthor | Lee, Kong-Soo | - |
dc.contributor.nonIdAuthor | Im, Ki-Vin | - |
dc.contributor.nonIdAuthor | Lim, Hanjin | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Phosphorus Diffusion | - |
dc.subject.keywordAuthor | Stacking Fault | - |
dc.subject.keywordAuthor | Interface | - |
dc.subject.keywordAuthor | Doped Silicon | - |
dc.subject.keywordPlus | STACKING-FAULTS | - |
dc.subject.keywordPlus | EPITAXIAL LAYER | - |
dc.subject.keywordPlus | HEAT-TREATMENT | - |
dc.subject.keywordPlus | ELIMINATION | - |
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