Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s

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We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PICoff-chip for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V-pp, the integrated 1 mm-phase-shifter modulator in the PICoff-chip demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V pi L pi similar to 1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PICintra-chip for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PICintra-chip chip and 0.13 mu m CMOS interface IC chips were hybrid-integrated. (C)2011 Optical Society of America
Publisher
OPTICAL SOC AMER
Issue Date
2011-12
Language
English
Article Type
Article
Keywords

CARRIER-DEPLETION; WAVE-GUIDE; OPTICAL MODULATION; ON-CHIP; GERMANIUM PHOTODETECTOR; INTERCONNECTS; PHOTODIODES; BANDWIDTH; RECEIVER; COMPACT

Citation

OPTICS EXPRESS, v.19, no.27, pp.26936 - 26947

ISSN
1094-4087
URI
http://hdl.handle.net/10203/223396
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