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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

3-Dimensional Vertically Integrated Nano-Shell All-Around-Gate MOSFET

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dc.contributor.authorKim, Chung-Jin-
dc.contributor.authorChoi, Yang-Kyu-
dc.date.accessioned2011-02-24T04:57:47Z-
dc.date.available2011-02-24T04:57:47Z-
dc.date.created2012-02-06-
dc.date.issued2007-06-
dc.identifier.citation15th Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), v., no., pp.61 - 64-
dc.identifier.urihttp://hdl.handle.net/10203/22302-
dc.description.sponsorshipThis research is partially sponsored by Samsung Electronics Co. Ltd.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEK/IEICE-
dc.title3-Dimensional Vertically Integrated Nano-Shell All-Around-Gate MOSFET-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage61-
dc.citation.endingpage64-
dc.citation.publicationname15th Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD)-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKim, Chung-Jin-
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EE-Conference Papers(학술회의논문)

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