DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bang, Te-Wook | ko |
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Kang, Min-Ho | ko |
dc.contributor.author | Oh, Jae-Sub | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2017-03-31T05:41:16Z | - |
dc.date.available | 2017-03-31T05:41:16Z | - |
dc.date.created | 2016-11-22 | - |
dc.date.created | 2016-11-22 | - |
dc.date.created | 2016-11-22 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/222783 | - |
dc.description.abstract | Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is based on the silicon-oxide-nitride-oxide-silicon(SONOS) configuration is characterized in two different operational modes, an inversion-mode and a junctionless-mode (JM). The LF noise showed 1/f-shape behavior regardless of the operational mode and followed the carrier number fluctuation model. With regard to the device-to-device variation and quality degradation of the LF noise after iterative program/erase operations, the five-story JM SONOS memory showed comparatively high immunity arising from its inherent bulk conduction and no-junction feature. Despite the harsh fabrication condition used to construct five-story VS-NW, even the five-story JM SONOS memory exhibited LF noise characteristics comparable to those of one-story JM SONOS memory. Thus, the five-story JM SONOS memory is attractive due to its high-performance capabilities and good scalability. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSISTORS | - |
dc.subject | SILICON | - |
dc.subject | DEGRADATION | - |
dc.subject | MOSFETS | - |
dc.subject | STRESS | - |
dc.title | Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000393765800010 | - |
dc.identifier.scopusid | 2-s2.0-85012977511 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 40 | - |
dc.citation.endingpage | 43 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2016.2632182 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Bang, Te-Wook | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.contributor.nonIdAuthor | Kang, Min-Ho | - |
dc.contributor.nonIdAuthor | Oh, Jae-Sub | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Gate-all-around (GAA) | - |
dc.subject.keywordAuthor | inversion-mode (IM) | - |
dc.subject.keywordAuthor | junctionless-mode (JM) | - |
dc.subject.keywordAuthor | low-frequency (LF) noise | - |
dc.subject.keywordAuthor | one-route all-dry etch | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | vertically stacked nanowire (VS-NW) | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | STRESS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.