DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Choi, Sung-Yool | - |
dc.contributor.advisor | 최성율 | - |
dc.contributor.author | Shin, Gwang Hyuk | - |
dc.contributor.author | 신광혁 | - |
dc.date.accessioned | 2017-03-29T02:39:21Z | - |
dc.date.available | 2017-03-29T02:39:21Z | - |
dc.date.issued | 2016 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=649622&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/221825 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2016.2 ,[vii, 61 p. :] | - |
dc.description.abstract | Increasing demands for non-volatile memory open up for extensive research on resistive switching memories owing to its simple structure with high density, fast switching speed and low power consumption. As the strategy of improving the density of data storage capacity, multilevel operation is one of the most promising solutions including three-dimensional cross point structure. Particularly, resistive switching memory based on two-dimensional nano-materials takes several advantages of flexibility, low cost and simple fabrication process. However, there are few reports on multilevel resistive switching memory compared to other materials. Herein, we demonstrated a multilevel resistive switching memory based on gra-phene oxide (GO) and $MoS_2$ using simple spin-coating process. $MoS_2$ nanosheets, chemi-cally exfoliated by Li-intercalation method, were successfully embedded between two GO layers as charge trapping sites. The resulting stacks of GO/$MoS_2$/GO exhibited excellent nonvolatile memory performance (at least 4 multiple resistance states, endurance over 100 cycles, stable retention time for $10^{4} s$). Furthermore, the charge transport mechanism was systematically investigated through the low-frequency 1/f noise analysis in various re-sistance states, which could be modulated by input voltage bias in negative differential re-sistance (NDR) region. This work propose a novel strategy to achieve a multilevel nonvola-tile memory, in which the stacked layers of two-dimensional nanosheets are utilized as re-sistive and charge storage materials. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Resistive switching memory | - |
dc.subject | multilevel operation | - |
dc.subject | graphene oxide | - |
dc.subject | Molybdenum disulfide | - |
dc.subject | low-frequency 1/f noise | - |
dc.subject | 저항 변화메모리 | - |
dc.subject | 다중 저항변화 동작 | - |
dc.subject | 산화그래핀 | - |
dc.subject | 이황화몰리브덴 | - |
dc.subject | 1/f 노이즈 | - |
dc.title | Multilevel resistive switching memory based on graphene oxide embedded with $MoS_2$ | - |
dc.title.alternative | 그래핀 옥사이드 박막 내 $MoS_2$를 삽입한 다중저항변화 메모리 소자 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
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