DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gwang-Sik | ko |
dc.contributor.author | Kim, Sun-Woo | ko |
dc.contributor.author | Kim, Seung-Hwan | ko |
dc.contributor.author | Park, June | ko |
dc.contributor.author | Seo, Yujin | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.contributor.author | Shin, Changhwan | ko |
dc.contributor.author | Shim, Jong Hyung | ko |
dc.contributor.author | Yu, Hyun-Yong | ko |
dc.date.accessioned | 2017-02-09T08:22:12Z | - |
dc.date.available | 2017-02-09T08:22:12Z | - |
dc.date.created | 2016-12-13 | - |
dc.date.created | 2016-12-13 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.citation | ACS APPLIED MATERIALS INTERFACES, v.8, no.51, pp.35419 - 35425 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220438 | - |
dc.description.abstract | A perfect ohmic contact formation technique for low-resistance source/drain (S/D) contact of germanium (Ge) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. A metal interlayer semiconductor (M-I-S) structure with an ultrathin TiO2/GeO2 interlayer stack is introduced into the contact scheme to alleviate Fermi-level pinning (FLP), and reduce the electron Schottky barrier height (SBH). The TiO2 interlayer can alleviate FLP by preventing formation of metal-induced gap states (MIGS) with its very low tunneling resistance and series resistance and can provide very small electron energy barrier at the metal/TiO2 interface. The GeO2 layer can induce further alleviation of FLP by reducing interface state density (D-it) on Ge which is one of main causes of FLP. Moreover, the proposed TiO2/GeO2 stack can minimize interface dipole formation which induces the SBH increase. The M-I-S structure incorporating the TiO2/GeO2 interlayer stack achieves a perfect ohmic characteristic, which has proved unattainable with a single interlayer. FLP can be perfectly alleviated, and the SBH of the metal/n-Ge can be tremendously reduced. The proposed structure (Ti/TiO2/GeO2/n-Ge) exhibits 0.193 eV of effective electron SBH which achieves 0.36 eV of SBH reduction from that of the Ti/n-Ge structure. The proposed M-I-S structure can be suggested as a promising S/D contact technique for nanoscale Ge n-channel transistors to overcome the large electron SBH problem caused by severe FLP. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | PLASMA | - |
dc.subject | CONTACT | - |
dc.subject | RESISTIVITY | - |
dc.subject | REDUCTION | - |
dc.subject | OXIDATION | - |
dc.subject | CMOS | - |
dc.title | Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack | - |
dc.type | Article | - |
dc.identifier.wosid | 000391081700051 | - |
dc.identifier.scopusid | 2-s2.0-85008417836 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 51 | - |
dc.citation.beginningpage | 35419 | - |
dc.citation.endingpage | 35425 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.6b10947 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Gwang-Sik | - |
dc.contributor.nonIdAuthor | Kim, Sun-Woo | - |
dc.contributor.nonIdAuthor | Kim, Seung-Hwan | - |
dc.contributor.nonIdAuthor | Park, June | - |
dc.contributor.nonIdAuthor | Shin, Changhwan | - |
dc.contributor.nonIdAuthor | Shim, Jong Hyung | - |
dc.contributor.nonIdAuthor | Yu, Hyun-Yong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | Fermi-level unpinning | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | plasma oxidation | - |
dc.subject.keywordAuthor | germanium dioxide | - |
dc.subject.keywordAuthor | titanium dioxide | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | CMOS | - |
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