Investigation of resistive probes with high sensitivity
Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO™). Enhancement probe and 1-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
- Publisher
- IEEE
- Issue Date
- 2008
- Language
- English
- Citation
Silicon Nanoelectronics Workshop
- ISSN
- 2161-4636
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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