Memory effect of a single-walled carbon nanotube on nitride-oxide structure under various bias conditions

Abstract

We report on the memory effect of single-walled carbon nanotubes (SWNTs) placed on a nitride-oxide layer structure designed as a charge storage medium. The conductance of the SWNT was modulated by the injected charge in the nitride-oxide interface and the polarities of injected charges were then detected. A large on/off-state current ratio (>10(4)) was obtained at a small program/erase voltage range (< 3 V). We also studied the effect of a half-selected cell on the conductance of the SWNTs to identify the issues with cross-point memory architecture.