DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Hojoon | ko |
dc.contributor.author | Yang, Hyeok-Jun | ko |
dc.contributor.author | Kim, Ji Woong | ko |
dc.contributor.author | Bae, Jong-Seung | ko |
dc.contributor.author | Kim, Jin-Woo | ko |
dc.contributor.author | Jeong, Beomgyun | ko |
dc.contributor.author | Crumlin, Ethan | ko |
dc.contributor.author | Park, Sungkyun | ko |
dc.contributor.author | Mun, Bongjin Simon | ko |
dc.date.accessioned | 2017-01-23T02:54:45Z | - |
dc.date.available | 2017-01-23T02:54:45Z | - |
dc.date.created | 2017-01-16 | - |
dc.date.created | 2017-01-16 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.120, no.20 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220183 | - |
dc.description.abstract | Oxygen post-annealing effects on tin (Sn) doped indium oxide (ITO) film are investigated with various analytical tools as a function of temperature, including in situ XRD, ambient pressure XPS (AP-XPS), and Hall measurement. As the annealing temperature increases up to 200 degrees C under the oxygen pressure of 100 mTorr, the in situ XRD shows the evidence of crystallization of the film while the AP-XPS reveals the formation of oxygen vacancy and Sn4+ states on surface. In addition, the mobility of ITO thin film is increased as the post-annealing temperature increases, supporting the results of both in situ XRD and AP-XPS. The results of angle-resolved XPS reveal that the degree of Sn segregation changes little after post-annealing procedure. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TIN OXIDE | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | THIN-FILMS | - |
dc.subject | SURFACE | - |
dc.subject | SPECTROSCOPY | - |
dc.title | In situ analysis of post-annealing effect on Sn-doped indium oxide films | - |
dc.type | Article | - |
dc.identifier.wosid | 000390231700031 | - |
dc.identifier.scopusid | 2-s2.0-85001060860 | - |
dc.type.rims | ART | - |
dc.citation.volume | 120 | - |
dc.citation.issue | 20 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.4968010 | - |
dc.contributor.localauthor | Yang, Hyeok-Jun | - |
dc.contributor.nonIdAuthor | Lim, Hojoon | - |
dc.contributor.nonIdAuthor | Kim, Ji Woong | - |
dc.contributor.nonIdAuthor | Bae, Jong-Seung | - |
dc.contributor.nonIdAuthor | Kim, Jin-Woo | - |
dc.contributor.nonIdAuthor | Jeong, Beomgyun | - |
dc.contributor.nonIdAuthor | Crumlin, Ethan | - |
dc.contributor.nonIdAuthor | Park, Sungkyun | - |
dc.contributor.nonIdAuthor | Mun, Bongjin Simon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TIN OXIDE | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
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