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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces

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dc.contributor.authorKim, GHko
dc.contributor.authorSimmons, MYko
dc.contributor.authorLiang, CTko
dc.contributor.authorRitchie, DAko
dc.contributor.authorChurchill, ACko
dc.contributor.authorSim, Heung-Sunko
dc.contributor.authorChang, Kee-Jooko
dc.contributor.authorIhm, Gko
dc.contributor.authorKim, Nko
dc.date.accessioned2011-02-08T09:02:55Z-
dc.date.available2011-02-08T09:02:55Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-10-
dc.identifier.citationPHYSICAL REVIEW B, v.64, no.16, pp.165313 - 165313-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10203/22000-
dc.description.abstractWe report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of AlAs has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal [(1) over bar 10] and [110] directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.-
dc.description.sponsorshipThe authors would like to thank P.H. Beton and P.C. Main for helpful discussions. We wish to thank the Engineering and Physical Sciences Research Council ~UK! for supporting this work. G.H.K. acknowledges financial support from the Korean Ministry of Information and Communication and D.A.R. acknowledges support from Toshiba Research Europe, Ltd. C.T.L. is grateful for support from NSC, Taiwan, and the Research Council, National Taiwan University.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMERICAN PHYSICAL SOC-
dc.subject2-DIMENSIONAL ELECTRON-GAS-
dc.subjectTRANSPORT-PROPERTIES-
dc.subjectQUANTUM DOTS-
dc.subjectGAAS-
dc.subjectMAGNETORESISTANCE-
dc.subjectMAGNETOTRANSPORT-
dc.subjectSUPERLATTICE-
dc.subjectANISOTROPY-
dc.subjectMOBILITY-
dc.subjectSTATES-
dc.titleMethod of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces-
dc.typeArticle-
dc.identifier.wosid000171866400056-
dc.identifier.scopusid2-s2.0-0035886592-
dc.type.rimsART-
dc.citation.volume64-
dc.citation.issue16-
dc.citation.beginningpage165313-
dc.citation.endingpage165313-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorSim, Heung-Sun-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorKim, GH-
dc.contributor.nonIdAuthorSimmons, MY-
dc.contributor.nonIdAuthorLiang, CT-
dc.contributor.nonIdAuthorRitchie, DA-
dc.contributor.nonIdAuthorChurchill, AC-
dc.contributor.nonIdAuthorIhm, G-
dc.contributor.nonIdAuthorKim, N-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlus2-DIMENSIONAL ELECTRON-GAS-
dc.subject.keywordPlusTRANSPORT-PROPERTIES-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusMAGNETOTRANSPORT-
dc.subject.keywordPlusSUPERLATTICE-
dc.subject.keywordPlusANISOTROPY-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusSTATES-
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