DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Jong-Hyun | ko |
dc.contributor.author | Kim, Hoon-Sik | ko |
dc.contributor.author | Lee, Keonjae | ko |
dc.contributor.author | Zhu, Zhengtao | ko |
dc.contributor.author | Menard, Etienne | ko |
dc.contributor.author | Nuzzo, Ralph G. | ko |
dc.contributor.author | Rogers, John A. | ko |
dc.date.accessioned | 2011-02-07T05:46:00Z | - |
dc.date.available | 2011-02-07T05:46:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.27, no.6, pp.460 - 462 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/21963 | - |
dc.description.abstract | This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm(2)/V(.)s, ON/OFF ratios > 10(5), and response frequencies > 500 MHz at channel lengths of 2 mu m. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches. | - |
dc.description.sponsorship | J.-H. Ahn would like to thank Prof. J.-C. Jung and Prof. W.-C. Zin at POSTECH, Korea, for the valuable discussions on polyimide and the Korea Research Foundation (KRF) for the postdoctoral fellowship support (M01-2004-000-20108-0). H.-S. Kim would like to thank Prof. E. Rosenbaum at University of Illinois at Urbana-Champaign (UIUC) for the valuable discussions on device physics. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.subject | PERFORMANCE NANOWIRE ELECTRONICS | - |
dc.subject | PHOTONICS | - |
dc.title | High-Speed Mechanically Flexible Single-Crystal Silicon Thin-Film Transistors on Plastic Substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000238070500012 | - |
dc.identifier.scopusid | 2-s2.0-33744758663 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 460 | - |
dc.citation.endingpage | 462 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2006.874764 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Keonjae | - |
dc.contributor.nonIdAuthor | Ahn, Jong-Hyun | - |
dc.contributor.nonIdAuthor | Kim, Hoon-Sik | - |
dc.contributor.nonIdAuthor | Zhu, Zhengtao | - |
dc.contributor.nonIdAuthor | Menard, Etienne | - |
dc.contributor.nonIdAuthor | Nuzzo, Ralph G. | - |
dc.contributor.nonIdAuthor | Rogers, John A. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | flexible circuits | - |
dc.subject.keywordAuthor | printed transistors | - |
dc.subject.keywordAuthor | silicon-on-insulator (SOI) wafer | - |
dc.subject.keywordAuthor | thin film transistor (TFT) | - |
dc.subject.keywordPlus | PERFORMANCE NANOWIRE ELECTRONICS | - |
dc.subject.keywordPlus | PHOTONICS | - |
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