The effect of Al atoms on the effective work function at TiN/HfO2 interface

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dc.contributor.authorKim, Geun Myeong-
dc.contributor.authorOh, Young Jun-
dc.contributor.authorChang, Kee Joo-
dc.date.accessioned2017-01-13T07:29:24Z-
dc.date.available2017-01-13T07:29:24Z-
dc.date.created2016-12-29-
dc.date.issued2016-11-
dc.identifier.citationThe 19th Asian Workshop on First-Principles Electronic Structure Calculations-
dc.identifier.urihttp://hdl.handle.net/10203/219040-
dc.languageEnglish-
dc.publisherNational Chiao Tung University-
dc.titleThe effect of Al atoms on the effective work function at TiN/HfO2 interface-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 19th Asian Workshop on First-Principles Electronic Structure Calculations-
dc.identifier.conferencecountryCH-
dc.identifier.conferencelocationNational Chiao Tung University-
dc.contributor.localauthorKim, Geun Myeong-
dc.contributor.localauthorOh, Young Jun-
dc.contributor.localauthorChang, Kee Joo-
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PH-Conference Papers(학술회의논문)
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