Effect of Thermal Annealing on the 30o Rotation Domains in ZnO Thin Films Grown on n-Si (001) Substrates

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dc.contributor.authorYuk, Jong Min-
dc.contributor.authorSon, DI-
dc.contributor.authorKim, TW-
dc.contributor.authorChoi, WK-
dc.date.accessioned2017-01-13T01:30:22Z-
dc.date.available2017-01-13T01:30:22Z-
dc.date.created2016-12-26-
dc.date.issued2008-08-26-
dc.identifier.citationThe 14th International Symposium on the Physics of Semiconductors and Applications-2008-
dc.identifier.urihttp://hdl.handle.net/10203/218676-
dc.languageEnglish-
dc.publisherInternational Symposium on the Physics of Semiconductors and Applications(ISPSA)-
dc.titleEffect of Thermal Annealing on the 30o Rotation Domains in ZnO Thin Films Grown on n-Si (001) Substrates-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 14th International Symposium on the Physics of Semiconductors and Applications-2008-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationJeju, Korea-
dc.contributor.localauthorYuk, Jong Min-
dc.contributor.nonIdAuthorSon, DI-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorChoi, WK-
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MS-Conference Papers(학술회의논문)
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