Effect of Constriction on Phonon Transport in Silicon Thin Films and Nanowires

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Technological advancement has made manufacturing of various nanostructures possible. Thermal transport in such nanostructures is fundamentally different from macroscale. Initial studies have indicated that thermal properties of these nanostructures also depend on its geometry. Hence, it is possible to tailor nanostructure geometry to achieve targeted thermal properties. In the present work, thermal transport in (a) constricted thin films and (b) constricted nanowires is studied using gray phonon Boltzmann transport equation (BTE) for a wide range of constriction ratio. Finite volume method is used to numerically solve the BTE with the relaxation time approximation. We show in this paper that by varying the degree of constriction, thermal conductivity of thin films and nanowires can be altered significantly. Thin films and nanowires are found to respond differently to constriction.
Publisher
TAYLOR & FRANCIS LTD
Issue Date
2016
Language
English
Article Type
Article
Citation

SMART SCIENCE, v.4, no.4, pp.173 - 179

ISSN
2308-0477
DOI
10.1080/23080477.2016.1229101
URI
http://hdl.handle.net/10203/218295
Appears in Collection
ME-Journal Papers(저널논문)
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