DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, SY | ko |
dc.contributor.author | Kim, WY | ko |
dc.contributor.author | Lee, HC | ko |
dc.contributor.author | Ahn, SW | ko |
dc.contributor.author | Lee, HM | ko |
dc.contributor.author | Choe, W | ko |
dc.date.accessioned | 2011-01-24T06:02:16Z | - |
dc.date.available | 2011-01-24T06:02:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.citation | PHYSICS OF PLASMAS, v.17 | - |
dc.identifier.issn | 1070-664X | - |
dc.identifier.uri | http://hdl.handle.net/10203/21777 | - |
dc.description.abstract | Based on the synthetic spectrum method of comparing with the experimental SiH(A(2)Delta-X-2 Pi) diatomic molecular emission spectrum, the rotational temperatures of SiH4-H-2 plasmas were investigated for various operating conditions. The plasma was generated between parallel plate electrodes biased at 40.68 MHz for thin film silicon deposition. Operating conditions of the gas pressure and the input power were varied from 2 to 8 Torr and from 200 to 600 W, respectively. Also, the total gas flow rate and H-2/SiH4 gas flow ratio were changed. By increasing the input power, the rotational temperature was increased up to 865 K by more energetic electrons collisions. The magnitude of rotational temperature was reduced by 200 K due to particle cooling effects, with increasing the total flow rates and gas pressure. The experimental results were discussed further using Si/SiH emission intensity ratio to show the characteristics of electron temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475438] | - |
dc.description.sponsorship | This work was partly supported by the Ministry of Knowledge Economy under Contract No. 2008NPV12J032100. The authors thank Mr. Y. S. Lee in Korea Advanced Institute of Science and Technology for his technical supports and discussions. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Measurement of rotational temperature using SiH(A(2)Delta-X-2 Pi) emission spectrum in SiH4-H-2 plasmas | - |
dc.type | Article | - |
dc.identifier.wosid | 000281906300066 | - |
dc.identifier.scopusid | 2-s2.0-77956321975 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.publicationname | PHYSICS OF PLASMAS | - |
dc.identifier.doi | 10.1063/1.3475438 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choe, W | - |
dc.contributor.nonIdAuthor | Moon, SY | - |
dc.contributor.nonIdAuthor | Kim, WY | - |
dc.contributor.nonIdAuthor | Lee, HC | - |
dc.contributor.nonIdAuthor | Ahn, SW | - |
dc.contributor.nonIdAuthor | Lee, HM | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILANE GLOW-DISCHARGE | - |
dc.subject.keywordPlus | FILM SOLAR-CELLS | - |
dc.subject.keywordPlus | MICROCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | EXCITATION | - |
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