First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Yongsoo | ko |
| dc.contributor.author | Shin, Mincheol | ko |
| dc.date.accessioned | 2017-01-03T07:42:17Z | - |
| dc.date.available | 2017-01-03T07:42:17Z | - |
| dc.date.created | 2016-11-17 | - |
| dc.date.issued | 2016-08-23 | - |
| dc.identifier.citation | 20th International Vacuum Congress | - |
| dc.identifier.uri | http://hdl.handle.net/10203/215687 | - |
| dc.language | English | - |
| dc.publisher | IVC-20 | - |
| dc.title | First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 20th International Vacuum Congress | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | BEXCO, Busan | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Ahn, Yongsoo | - |
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