Self-Formation of Ohmic Contact for Reduction of Schottky Barrier Height in a TiN/Ti/SiO2/n-Si Structure

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dc.contributor.authorJeon, Chang-Hoonko
dc.contributor.authorSeo, Yujinko
dc.contributor.authorBaek, Seung-heon Chrisko
dc.contributor.authorCho, Byung-Jinko
dc.contributor.authorLee, Seok-Heeko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2017-01-03T06:28:34Z-
dc.date.available2017-01-03T06:28:34Z-
dc.date.created2016-11-22-
dc.date.issued2016-03-28-
dc.identifier.citationThe 2016 MRS Spring Meeting-
dc.identifier.urihttp://hdl.handle.net/10203/215372-
dc.languageEnglish-
dc.publisherThe 2016 MRS Spring Meeting-
dc.titleSelf-Formation of Ohmic Contact for Reduction of Schottky Barrier Height in a TiN/Ti/SiO2/n-Si Structure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 2016 MRS Spring Meeting-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationPhoenix Convention Center, Arizona-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.localauthorLee, Seok-Hee-
dc.contributor.localauthorChoi, Yang-Kyu-
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EE-Conference Papers(학술회의논문)
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