Wideband Equivalent Circuit Model of Through-Silicon-Via with MOS Capacitance Effect
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Kibeom | ko |
| dc.contributor.author | Park, Hyun Ho | ko |
| dc.contributor.author | Ahn, Seungyoung | ko |
| dc.date.accessioned | 2017-01-03T06:00:36Z | - |
| dc.date.available | 2017-01-03T06:00:36Z | - |
| dc.date.created | 2016-11-29 | - |
| dc.date.issued | 2016-05-18 | - |
| dc.identifier.citation | Asia-Pacific Electromagnetic Compatibility (APEMC) Symposium | - |
| dc.identifier.uri | http://hdl.handle.net/10203/215284 | - |
| dc.language | English | - |
| dc.publisher | APEMC Society | - |
| dc.title | Wideband Equivalent Circuit Model of Through-Silicon-Via with MOS Capacitance Effect | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Asia-Pacific Electromagnetic Compatibility (APEMC) Symposium | - |
| dc.identifier.conferencecountry | CC | - |
| dc.identifier.conferencelocation | Shenzhen Convention and Exhibition Center | - |
| dc.contributor.localauthor | Ahn, Seungyoung | - |
| dc.contributor.nonIdAuthor | Park, Hyun Ho | - |
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- GT-Conference Papers(학술회의논문)
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