On the growth and coalescence of the epitaxial islands of L1(0)-FePt (001) thin-film

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dc.contributor.authorRahman, Md. Abdurko
dc.contributor.authorPark, Joong-Keunko
dc.date.accessioned2016-12-14T02:23:45Z-
dc.date.available2016-12-14T02:23:45Z-
dc.date.created2016-10-28-
dc.date.created2016-10-28-
dc.date.issued2016-10-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.120, no.16-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/214841-
dc.description.abstractThe growth and coalescence behavior of L1(0)-FePt (001) epitaxial islands have been studied using in-plane and cross-section HRTEM study. In particular, the defect structure of coalesced boundary has been investigated utilizing FFT technique by investigating the defects of lattice-fringes of boundary plane near the boundary. The growth of epitaxial islands, at low deposition rate, leads to a development of an island-network structure, which consists of a network of inter-island space channels (IISCs). The IISCs are basically composed of two-90 degrees (110) s and one (200), which are slightly adjusted at a corner to meet the force balance. The space-channels remaining un-filled up to percolation-stage are mostly two 90 degrees (110) channels because of the presence of two chemically distinctive (110) surfaces. The coalescence of island network structure occurs either by "crack-closure" (zipping) mechanism or by "groove-filling" mechanism by repeated epitaxial growth. The defect structure in a simple "zipped" interface consists of two asymmetrical tilt boundaries with opposite sense to minimize the strain energy. The magnetic coercivity and nucleation field, which are large in island-network structure, decrease significantly with the progress of coalescence due to the introduction of defects at the interface. Published by AIP Publishing.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleOn the growth and coalescence of the epitaxial islands of L1(0)-FePt (001) thin-film-
dc.typeArticle-
dc.identifier.wosid000387580600055-
dc.identifier.scopusid2-s2.0-84994049243-
dc.type.rimsART-
dc.citation.volume120-
dc.citation.issue16-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.4966169-
dc.contributor.localauthorPark, Joong-Keun-
dc.type.journalArticleArticle-
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