DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rahman, Md. Abdur | ko |
dc.contributor.author | Park, Joong-Keun | ko |
dc.date.accessioned | 2016-12-14T02:23:45Z | - |
dc.date.available | 2016-12-14T02:23:45Z | - |
dc.date.created | 2016-10-28 | - |
dc.date.created | 2016-10-28 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.120, no.16 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/214841 | - |
dc.description.abstract | The growth and coalescence behavior of L1(0)-FePt (001) epitaxial islands have been studied using in-plane and cross-section HRTEM study. In particular, the defect structure of coalesced boundary has been investigated utilizing FFT technique by investigating the defects of lattice-fringes of boundary plane near the boundary. The growth of epitaxial islands, at low deposition rate, leads to a development of an island-network structure, which consists of a network of inter-island space channels (IISCs). The IISCs are basically composed of two-90 degrees (110) s and one (200), which are slightly adjusted at a corner to meet the force balance. The space-channels remaining un-filled up to percolation-stage are mostly two 90 degrees (110) channels because of the presence of two chemically distinctive (110) surfaces. The coalescence of island network structure occurs either by "crack-closure" (zipping) mechanism or by "groove-filling" mechanism by repeated epitaxial growth. The defect structure in a simple "zipped" interface consists of two asymmetrical tilt boundaries with opposite sense to minimize the strain energy. The magnetic coercivity and nucleation field, which are large in island-network structure, decrease significantly with the progress of coalescence due to the introduction of defects at the interface. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | On the growth and coalescence of the epitaxial islands of L1(0)-FePt (001) thin-film | - |
dc.type | Article | - |
dc.identifier.wosid | 000387580600055 | - |
dc.identifier.scopusid | 2-s2.0-84994049243 | - |
dc.type.rims | ART | - |
dc.citation.volume | 120 | - |
dc.citation.issue | 16 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.4966169 | - |
dc.contributor.localauthor | Park, Joong-Keun | - |
dc.type.journalArticle | Article | - |
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