DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ki, Bugeun | ko |
dc.contributor.author | Kim, Kyung Ho | ko |
dc.contributor.author | Kim, Hyungjun | ko |
dc.contributor.author | Lee, Chulwon | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Oh, Jungwoo | ko |
dc.date.accessioned | 2016-12-01T06:53:42Z | - |
dc.date.available | 2016-12-01T06:53:42Z | - |
dc.date.created | 2016-11-21 | - |
dc.date.created | 2016-11-21 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5239 - 5242 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/214521 | - |
dc.description.abstract | We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion. A tensile strain of 0.06% in the as-grown Ge increased to 0.31% after annealing at 850 degrees C. As the thermal budget of this post-growth anneal was increased, the tensile strain of relaxed Ge-on-Si also increases and a Si-Ge alloy forms. Physical characterization indicates a tunable tensile stain in Ge-on-Si can be realized using post-growth annealing, which will allow for a wide range of frequencies in optical interconnections | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | PHOTODETECTORS | - |
dc.subject | SILICON | - |
dc.subject | EPILAYERS | - |
dc.subject | SI(001) | - |
dc.title | Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000386123100162 | - |
dc.identifier.scopusid | 2-s2.0-84971526217 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 5239 | - |
dc.citation.endingpage | 5242 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2016.12233 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Ki, Bugeun | - |
dc.contributor.nonIdAuthor | Kim, Kyung Ho | - |
dc.contributor.nonIdAuthor | Kim, Hyungjun | - |
dc.contributor.nonIdAuthor | Oh, Jungwoo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Optical Interconnection | - |
dc.subject.keywordAuthor | Ge-on-Si | - |
dc.subject.keywordAuthor | Hetero-Epitaxy | - |
dc.subject.keywordAuthor | Raman Shift | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | EPILAYERS | - |
dc.subject.keywordPlus | SI(001) | - |
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