DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, Jiwoong | ko |
dc.contributor.author | Ki, Bugeun | ko |
dc.contributor.author | Kim, Daeik | ko |
dc.contributor.author | Lee, Chulwon | ko |
dc.contributor.author | Nam, Donguk | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Oh, Jungwoo | ko |
dc.date.accessioned | 2016-11-30T08:42:57Z | - |
dc.date.available | 2016-11-30T08:42:57Z | - |
dc.date.created | 2016-11-16 | - |
dc.date.created | 2016-11-16 | - |
dc.date.created | 2016-11-16 | - |
dc.date.created | 2016-11-16 | - |
dc.date.created | 2016-11-16 | - |
dc.date.created | 2016-11-16 | - |
dc.date.issued | 2016-09 | - |
dc.identifier.citation | OPTICAL MATERIALS EXPRESS, v.6, no.9, pp.2939 | - |
dc.identifier.issn | 2159-3930 | - |
dc.identifier.uri | http://hdl.handle.net/10203/214285 | - |
dc.description.abstract | We investigated the optical, electrical, and structural properties of epitaxially grown Ge-on-Si substrates after phosphorous implantation. Ion implantation increases n-type doping in Ge for an on-chip light source. However, its effects on Ge should be carefully studied as implantation may increase the recombination sites, and possibly reduce light-emitting efficiency. We studied the light-emitting efficiency of implanted Ge using various material characterizations. We found that phosphorous implantation increased the doping concentration of in situ doped Ge-on-Si, which boosted the photoluminescence by 12-30%. It is therefore critical to optimize the post-annealing and implantation doses to increase light-emitting efficiency of Ge. (C) 2016 Optical Society of Americ | - |
dc.language | English | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.title | Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency | - |
dc.type | Article | - |
dc.identifier.wosid | 000385408800023 | - |
dc.identifier.scopusid | 2-s2.0-84991665921 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 2939 | - |
dc.citation.publicationname | OPTICAL MATERIALS EXPRESS | - |
dc.identifier.doi | 10.1364/OME.6.002939 | - |
dc.contributor.localauthor | Nam, Donguk | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Baek, Jiwoong | - |
dc.contributor.nonIdAuthor | Ki, Bugeun | - |
dc.contributor.nonIdAuthor | Kim, Daeik | - |
dc.contributor.nonIdAuthor | Oh, Jungwoo | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | N-TYPE | - |
dc.subject.keywordPlus | LASER | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.