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A STUDY OF SILICON INTERSTITIAL KINETICS USING SILICON MEMBRANES - APPLICATIONS TO 2D DOPANT DIFFUSION

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dc.contributor.authorAhn, SungTaeko
dc.contributor.authorGRIFFIN, PBko
dc.contributor.authorSHOTT, JDko
dc.contributor.authorPLUMMER, JDko
dc.contributor.authorTILLER, WAko
dc.date.accessioned2016-11-30T01:51:31Z-
dc.date.available2016-11-30T01:51:31Z-
dc.date.created2016-11-10-
dc.date.created2016-11-10-
dc.date.issued1987-12-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.62, no.12, pp.4745 - 4755-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/214189-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleA STUDY OF SILICON INTERSTITIAL KINETICS USING SILICON MEMBRANES - APPLICATIONS TO 2D DOPANT DIFFUSION-
dc.typeArticle-
dc.identifier.wosidA1987L184400015-
dc.identifier.scopusid2-s2.0-11344252507-
dc.type.rimsART-
dc.citation.volume62-
dc.citation.issue12-
dc.citation.beginningpage4745-
dc.citation.endingpage4755-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.339028-
dc.contributor.localauthorAhn, SungTae-
dc.contributor.nonIdAuthorGRIFFIN, PB-
dc.contributor.nonIdAuthorSHOTT, JD-
dc.contributor.nonIdAuthorPLUMMER, JD-
dc.contributor.nonIdAuthorTILLER, WA-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
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