A Hot Carrier Resistant RC(Recessed Channel) MOSFET Structure for Deep Submicron Application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, C.Y. | - |
| dc.contributor.author | Hong, S.W. | - |
| dc.contributor.author | Kim, S.H. | - |
| dc.contributor.author | Han, J.H. | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.date.accessioned | 2011-01-06 | - |
| dc.date.available | 2011-01-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991-12 | - |
| dc.identifier.citation | 1st Int. Device Research Symposium, v., no., pp.427 - 430 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/21399 | - |
| dc.description.sponsorship | The authors acknowledge the financial support of GoldStar Electron Co., Ltd. for this work. | en |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | 1st Int. Device Research Symposium | - |
| dc.title | A Hot Carrier Resistant RC(Recessed Channel) MOSFET Structure for Deep Submicron Application | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 427 | - |
| dc.citation.endingpage | 430 | - |
| dc.citation.publicationname | 1st Int. Device Research Symposium | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Lee, C.Y. | - |
| dc.contributor.nonIdAuthor | Hong, S.W. | - |
| dc.contributor.nonIdAuthor | Kim, S.H. | - |
| dc.contributor.nonIdAuthor | Han, J.H. | - |
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