Surface-Shielding Nanostructures Derived from Self-Assembled Block Copolymers Enable Reliable Plasma Doping for Few-Layer Transition Metal Dichalcogenides

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Precise modulation of electrical and optical properties of 2D transition metal dichalcogenides (TMDs) is required for their application to high-performance devices. Although conventional plasma-based doping methods have provided excellent controllability and reproducibility for bulk or relatively thick TMDs, the application of plasma doping for ultrathin few-layer TMDs has been hindered by serious degradation of their properties. Herein, a reliable and universal doping route is reported for few-layer TMDs by employing surface-shielding nanostructures during a plasma-doping process. It is shown that the surface-protection oxidized polydimethylsiloxane nanostructures obtained from the sub-20 nm self-assembly of Si-containing block copolymers can preserve the integrity of 2D TMDs and maintain high mobility while affording extensive control over the doping level. For example, the self-assembled nanostructures form periodically arranged plasma-blocking and plasma-accepting nanoscale regions for realizing modulated plasma doping on few-layer MoS2, controlling the n-doping level of few-layer MoS2 from 1.9 x 10(11) cm(-2) to 8.1 x 10(11) cm(-2) via the local generation of extra sulfur vacancies without compromising the carrier mobility
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2016-08
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; MOLYBDENUM-DISULFIDE; MONOLAYER MOS2; LARGE-AREA; GRAPHENE; LITHOGRAPHY; PATTERNS; PHOTOLUMINESCENCE; TRANSPARENT; ARRAYS

Citation

ADVANCED FUNCTIONAL MATERIALS, v.26, no.31, pp.5631 - 5640

ISSN
1616-301X
DOI
10.1002/adfm.201600654
URI
http://hdl.handle.net/10203/213943
Appears in Collection
MS-Journal Papers(저널논문)
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