Screening mechanisms at polar oxide heterointerfaces

Cited 69 time in webofscience Cited 0 time in scopus
  • Hit : 244
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorHong, Daniel Seungbumko
dc.contributor.authorNakhmanson, Serge M.ko
dc.contributor.authorFong, Dillon D.ko
dc.date.accessioned2016-11-09T06:33:01Z-
dc.date.available2016-11-09T06:33:01Z-
dc.date.created2016-10-27-
dc.date.created2016-10-27-
dc.date.created2016-10-27-
dc.date.issued2016-07-
dc.identifier.citationREPORTS ON PROGRESS IN PHYSICS, v.79, no.7-
dc.identifier.issn0034-4885-
dc.identifier.urihttp://hdl.handle.net/10203/213901-
dc.description.abstractThe interfaces of polar oxide heterostructures can display electronic properties unique from the oxides they border, as they require screening from either internal or external sources of charge. The screening mechanism depends on a variety of factors, including the band structure at the interface, the presence of point defects or adsorbates, whether or not the oxide is ferroelectric, and whether or not an external field is applied. In this review, we discuss both theoretical and experimental aspects of different screening mechanisms, giving special emphasis to ways in which the mechanism can be altered to provide novel or tunable functionalities. We begin with a theoretical introduction to the problem and highlight recent progress in understanding the impact of point defects on polar interfaces. Different case studies are then discussed, for both the high thickness regime, where interfaces must be screened and each interface can be considered separately, and the low thickness regime, where the degree and nature of screening can be manipulated and the interfaces are close enough to interact. We end with a brief outlook toward new developments in this rapidly progressing field-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.titleScreening mechanisms at polar oxide heterointerfaces-
dc.typeArticle-
dc.identifier.wosid000383955800012-
dc.identifier.scopusid2-s2.0-84978802716-
dc.type.rimsART-
dc.citation.volume79-
dc.citation.issue7-
dc.citation.publicationnameREPORTS ON PROGRESS IN PHYSICS-
dc.identifier.doi10.1088/0034-4885/79/7/076501-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.nonIdAuthorNakhmanson, Serge M.-
dc.contributor.nonIdAuthorFong, Dillon D.-
dc.description.isOpenAccessN-
dc.type.journalArticleReview-
dc.subject.keywordAuthoroxide heterostructures-
dc.subject.keywordAuthorpolar interfaces-
dc.subject.keywordAuthorferroelectricity-
dc.subject.keywordPlus2-DIMENSIONAL ELECTRON-GAS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusFERROELECTRIC THIN-FILMS-
dc.subject.keywordPlusCHARGE GRADIENT MICROSCOPY-
dc.subject.keywordPlusTRANSITION-METAL OXIDES-
dc.subject.keywordPlusOXYGEN-SURFACE EXCHANGE-
dc.subject.keywordPlusBOUNDARY-CONDITIONS-
dc.subject.keywordPlusDEFECT CHEMISTRY-
dc.subject.keywordPlusBAND OFFSETS-
dc.subject.keywordPlusAB-INITIO-
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 69 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0