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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

NEW CMOS TRIODE TRANSCONDUCTOR

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dc.contributor.authorLEE, SOko
dc.contributor.authorPARK, SBko
dc.contributor.authorLee, Kwyroko
dc.date.accessioned2011-01-05T06:00:02Z-
dc.date.available2011-01-05T06:00:02Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1994-06-
dc.identifier.citationELECTRONICS LETTERS, v.30, no.12, pp.946 - 948-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/21385-
dc.description.abstractA new CMOS transconductor is proposed, which is built around two conversion transistors operating in the triode region with their source and drain voltages kept constant. The proposed transconductor has an input swing range of 7V peak to peak within 1% THD at supply voltages of +/-5V and a large transconductance tuning range. Moreover, it can operate satisfactorily regardless of the transistor body connection.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEE-INST ELEC ENG-
dc.titleNEW CMOS TRIODE TRANSCONDUCTOR-
dc.typeArticle-
dc.identifier.wosidA1994NV16000019-
dc.identifier.scopusid2-s2.0-0028769396-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.issue12-
dc.citation.beginningpage946-
dc.citation.endingpage948-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:19940668-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorLEE, SO-
dc.contributor.nonIdAuthorPARK, SB-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS INTEGRATED CIRCUITS-
dc.subject.keywordAuthorTRANSCONDUCTORS-
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