DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Minkyu | ko |
dc.contributor.author | Seo, Jung-Hun | ko |
dc.contributor.author | Kim, Munho | ko |
dc.contributor.author | Lee, Jaeseong | ko |
dc.contributor.author | Liu, Dong | ko |
dc.contributor.author | Zhou, Weidong | ko |
dc.contributor.author | Yu, Zongfu | ko |
dc.contributor.author | Ma, Zhenqiang | ko |
dc.date.accessioned | 2016-10-04T08:59:06Z | - |
dc.date.available | 2016-10-04T08:59:06Z | - |
dc.date.created | 2016-09-21 | - |
dc.date.created | 2016-09-21 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.34, no.4 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/213182 | - |
dc.description.abstract | In this paper, the authors report resonant cavity (RC) metal-semiconductor-metal (MSM) germanium nanomembrane (Ge NM) photodetectors via transfer printing. The dislocation-free Ge NM layer was transferred onto an ultrathin Si NM/SiO2 distributed Bragg reflector. As a result, a low dark current density of 1 x 10(-9) A/mu m(2) and a quantum efficiency of 17.3% at 1.55 mu m, which is twice larger than the quantum efficiency without a bottom mirror, were measured from the transferred RC MSM Ge photodetector. The enhancement of the quantum efficiency is verified by simulation. (C) 2016 American Vacuum Society | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | METAL PHOTODETECTORS | - |
dc.subject | SILICON | - |
dc.subject | GE | - |
dc.subject | SI | - |
dc.subject | PHOTONICS | - |
dc.subject | ADHESION | - |
dc.title | Resonant cavity germanium photodetector via stacked single-crystalline nanomembranes | - |
dc.type | Article | - |
dc.identifier.wosid | 000382207700004 | - |
dc.identifier.scopusid | 2-s2.0-84968835217 | - |
dc.type.rims | ART | - |
dc.citation.volume | 34 | - |
dc.citation.issue | 4 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.identifier.doi | 10.1116/1.4948531 | - |
dc.contributor.nonIdAuthor | Seo, Jung-Hun | - |
dc.contributor.nonIdAuthor | Kim, Munho | - |
dc.contributor.nonIdAuthor | Lee, Jaeseong | - |
dc.contributor.nonIdAuthor | Liu, Dong | - |
dc.contributor.nonIdAuthor | Zhou, Weidong | - |
dc.contributor.nonIdAuthor | Yu, Zongfu | - |
dc.contributor.nonIdAuthor | Ma, Zhenqiang | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | METAL PHOTODETECTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | PHOTONICS | - |
dc.subject.keywordPlus | ADHESION | - |
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