Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Woo, Myung Hun | ko |
| dc.contributor.author | Jang, Byung Chul | ko |
| dc.contributor.author | Choi, Junhwan | ko |
| dc.contributor.author | Shin, Gwang Hyuk | ko |
| dc.contributor.author | Seong, Hyejeong | ko |
| dc.contributor.author | Im, Sung Gap | ko |
| dc.contributor.author | Choi, Sung Yool | ko |
| dc.date.accessioned | 2016-10-04T07:27:10Z | - |
| dc.date.available | 2016-10-04T07:27:10Z | - |
| dc.date.created | 2016-09-21 | - |
| dc.date.created | 2016-09-21 | - |
| dc.date.created | 2016-09-21 | - |
| dc.date.created | 2016-09-21 | - |
| dc.date.issued | 2016-09-14 | - |
| dc.identifier.citation | ESSCIRC-ESSDERC 2016 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/213098 | - |
| dc.language | English | - |
| dc.publisher | ESSCIRC-ESSDERC 2016 | - |
| dc.title | Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000386655900070 | - |
| dc.identifier.scopusid | 2-s2.0-84994477245 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | ESSCIRC-ESSDERC 2016 | - |
| dc.identifier.conferencecountry | SZ | - |
| dc.identifier.conferencelocation | Lausanne | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Im, Sung Gap | - |
| dc.contributor.localauthor | Choi, Sung Yool | - |
| dc.contributor.nonIdAuthor | Woo, Myung Hun | - |
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