DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min-Cheol | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Lee, Seungwon | ko |
dc.contributor.author | Kwon, Hyukyun | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Moon, Hanul | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.date.accessioned | 2016-09-07T04:23:25Z | - |
dc.date.available | 2016-09-07T04:23:25Z | - |
dc.date.created | 2016-08-29 | - |
dc.date.created | 2016-08-29 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.6 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212874 | - |
dc.description.abstract | We propose a device architecture for a transistor-type organic photomemory that can be programmed fast enough for use in electrical photography. Following the strategies used in a flash memory where an isolated charge storage node or floating gate is employed, the proposed organic photomemory adopts an isolated photo-absorption zone that is embedded between upper and lower insulator layers without directly interfacing with a semiconductor channel layer. This isolated photo-absorption zone then allows the device to operate in electrically 'on' state, in which the high electric-field region can have a maximal spatial overlap with the illuminated area for efficient and facile light-programming. With the proposed approach, a significant threshold voltage shift is attained even with the exposure time as short as 5 ms. High quality dielectric layers prepared by initiated chemical vapor deposition ensure erasing to occur only with electrical signal in a controlled manner. Retention time up to 700 s is demonstrated | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Efficient organic photomemory with photography-ready programming speed | - |
dc.type | Article | - |
dc.identifier.wosid | 000380197800002 | - |
dc.identifier.scopusid | 2-s2.0-84979591046 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/srep30536 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Moon, Hanul | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
dc.contributor.nonIdAuthor | Lee, Seungwon | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | LIGHT DETECTION | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PHOTODIODES | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
dc.subject.keywordPlus | INTEGRATION | - |
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