DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, I. H. | ko |
dc.contributor.author | Ahn, K. J. | ko |
dc.contributor.author | Kang, B. J. | ko |
dc.contributor.author | Bae, S. | ko |
dc.contributor.author | Hong, B. H. | ko |
dc.contributor.author | Yeom, D. -I. | ko |
dc.contributor.author | Lee, K. | ko |
dc.contributor.author | Jeong, Y. U. | ko |
dc.contributor.author | Rotermund, Fabian Marcel | ko |
dc.date.accessioned | 2016-09-07T02:45:28Z | - |
dc.date.available | 2016-09-07T02:45:28Z | - |
dc.date.created | 2016-08-19 | - |
dc.date.created | 2016-08-19 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.102, no.19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212692 | - |
dc.description.abstract | We investigate transmission characteristics and sheet conductivity of mono- to multi-layer graphene deposited on quartz in the terahertz (THz) frequency region. The free carrier absorption and Fabry-Perot interference between graphene layers give rise to nonlinear decrease of THz transmission from 76.7% to 27% for mono- to 12-layer graphene. These phenomena are well explained with a modified theoretical model based on Drude conductivity. The optical sheet conductivity of multi-layer graphene, made by layer-by-layer random stacking of high-quality mono- layer graphene, at 1 THz exhibits two orders of magnitude higher values than the universal optical conductivity due to intraband transition of intrinsic graphene. (C) 2013 AIP Publishing LLC | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DEVICES | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | TRANSISTORS | - |
dc.subject | MODULATORS | - |
dc.title | Terahertz transmission and sheet conductivity of randomly stacked multi-layer graphene | - |
dc.type | Article | - |
dc.identifier.wosid | 000320440800009 | - |
dc.identifier.scopusid | 2-s2.0-84877962112 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.issue | 19 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4805074 | - |
dc.contributor.localauthor | Rotermund, Fabian Marcel | - |
dc.contributor.nonIdAuthor | Baek, I. H. | - |
dc.contributor.nonIdAuthor | Ahn, K. J. | - |
dc.contributor.nonIdAuthor | Kang, B. J. | - |
dc.contributor.nonIdAuthor | Bae, S. | - |
dc.contributor.nonIdAuthor | Hong, B. H. | - |
dc.contributor.nonIdAuthor | Yeom, D. -I. | - |
dc.contributor.nonIdAuthor | Lee, K. | - |
dc.contributor.nonIdAuthor | Jeong, Y. U. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MODULATORS | - |
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