DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.date.accessioned | 2016-09-07T01:08:20Z | - |
dc.date.available | 2016-09-07T01:08:20Z | - |
dc.date.created | 2016-05-09 | - |
dc.date.created | 2016-05-09 | - |
dc.date.created | 2016-05-09 | - |
dc.date.created | 2016-05-09 | - |
dc.date.created | 2016-05-09 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | JOURNAL OF INFORMATION DISPLAY, v.17, no.2, pp.43 - 49 | - |
dc.identifier.issn | 1598-0316 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212499 | - |
dc.description.abstract | A copolymer-based gate insulator was synthesized from 1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane (V3D3) and 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl methacrylate (PFDMA) via initiated chemical vapor deposition. The synthesis of the random copolymer of poly(V3D3-co-PFDMA) was confirmed by Fourier transform infrared, X-ray photoelectron spectroscopy, and water contact angle analysis. No phase segregation and pinhole formation were observed in the atomic force microscopy images of the copolymer film. The ultra-thin copolymer film showed an extremely low leakage current density (J < 10(-9) A/cm(2) in the range of +/-2 MV/cm) even with a 70 nm thickness. Pentacene organic thin-film transistors (OTFTs) were fabricated with the copolymer gate insulator and showed excellent operational stability. An up to 95% initial drain current was maintained, and a negligible shift in threshold voltage (VT) was observed even after applying a constant gate bias stress of -12 V and a corresponding electric field of 1.7 MV/cm to the OTFT for 3 ks. | - |
dc.language | English | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Vapor-phase deposition of the fluorinated copolymer gate insulator for the p-type organic thin-film transistor | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-84964434769 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 43 | - |
dc.citation.endingpage | 49 | - |
dc.citation.publicationname | JOURNAL OF INFORMATION DISPLAY | - |
dc.identifier.doi | 10.1080/15980316.2016.1171803 | - |
dc.identifier.kciid | ART002118555 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Organic thin-film transistor | - |
dc.subject.keywordAuthor | gate insulator | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition | - |
dc.subject.keywordAuthor | polymer thin film | - |
dc.subject.keywordAuthor | operational stability | - |
dc.subject.keywordPlus | THRESHOLD-VOLTAGE CONTROL | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | STABILITY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.