Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

Cited 14 time in webofscience Cited 0 time in scopus
  • Hit : 512
  • Download : 0
Temperature dependence of the reliability characteristics of magnetic tunnel junctions (MTJs) with a thin (similar to 1 nm thick) MgO dielectric film were investigated by numerical analyses based on the E-model, 1/E-model, and power-law voltage V-model, as well as by measuring time-dependent dielectric breakdown (TDDB) degradation. Although the tunneling process giving rise to TDDB is still under debate, the temperature dependence of TDDB was much weaker using the 1/E model than the E-model or power-law model. The TDDB data measured experimentally in CoFeB/MgO/CoFeB MTJ devices also showed rather weak temperature dependence, in good agreement with the numerical results obtained from the 1/E-model considering the self-heating effect in MTJ devices. Moreover, we confirmed by interval voltage stress tests that some degradation in the MgO dielectric layer occurred. Based on our findings, we suggest that to characterize the reliability of MTJs, combined temperature measurements of TDDB and 1/E-model analyses taking the self-heating effect into account should be performed
Publisher
IOP PUBLISHING LTD
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

RESISTANCE DRIFT; BREAKDOWN; TORQUE; DEGRADATION; PHYSICS; MODEL

Citation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.7

ISSN
0268-1242
DOI
10.1088/0268-1242/31/7/075004
URI
http://hdl.handle.net/10203/212096
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 14 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0