Epitaxial Growth of MgO and CoFe/MgO on Ge(001) Substrates by Molecular Beam Epitaxy

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dc.contributor.authorJeon, Kun-Rokko
dc.contributor.authorPark, Chang-Yupko
dc.contributor.authorShin, Sung-Chulko
dc.date.accessioned2010-12-23T03:03:53Z-
dc.date.available2010-12-23T03:03:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-03-
dc.identifier.citationCRYSTAL GROWTH & DESIGN, v.10, pp.1346 - 1350-
dc.identifier.issn1528-7483-
dc.identifier.urihttp://hdl.handle.net/10203/21203-
dc.description.abstractWe report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It wits found that the epitaxial growth of a MgO film on Ge Could be realized at a low growth temperature of 125 +/- 5 degrees C and the MgO matches the Ge with a cell ratio of 2(1/2):1, which renders MgO rotated by 45 degrees relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bee CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100](parallel to)MgO(001)[110](parallel to)Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is 1430 +/- 20 emu/cc, which is comparable to the value of bulk CoFe.-
dc.description.sponsorshipThis work was supported by the National Research Laboratory Program (Contract No. R0A-2007-000-20026-0), the WCU (World Class University) Program (Contract No. R33-2008-000-10078-0), and the GPP (Contract No. K2070200001408E020001410) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER CHEMICAL SOC-
dc.subjectELECTRICAL SPIN INJECTION-
dc.subjectSPINTRONICS-
dc.subjectHETEROSTRUCTURES-
dc.subjectSURFACE-
dc.titleEpitaxial Growth of MgO and CoFe/MgO on Ge(001) Substrates by Molecular Beam Epitaxy-
dc.typeArticle-
dc.identifier.wosid000275049800050-
dc.identifier.scopusid2-s2.0-77949373751-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.beginningpage1346-
dc.citation.endingpage1350-
dc.citation.publicationnameCRYSTAL GROWTH & DESIGN-
dc.identifier.doi10.1021/cg901380b-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorShin, Sung-Chul-
dc.type.journalArticleArticle-
dc.subject.keywordPlusELECTRICAL SPIN INJECTION-
dc.subject.keywordPlusSPINTRONICS-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusSURFACE-
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