High-frequency on-chip inductance model

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The effect of random signal lines on the on-chip inductance is quantitatively investigated, using an S-parameter-based methodology and a full wave solver, leading to an empirical model for high-frequency inductance. The results clearly indicate that the random signal lines as well as designated ground lines provide return paths for gigahertz-frequency signals. In particular, quasi TEM-wave-like propagation mode is observed above 10 GHz, revealing a unique relationship between capacitance and inductance of the signal line. Incorporating the random capacitive coupling effect, our frequency-dependent RLC model is confirmed to be valid up to 100 GHz.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2002-12
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.23, no.12, pp.740 - 742

ISSN
0741-3106
URI
http://hdl.handle.net/10203/21063
Appears in Collection
EE-Journal Papers(저널논문)
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