Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

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Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler's law for photoemission on metals. The Fowler's law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity-both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting
Publisher
NATURE PUBLISHING GROUP
Issue Date
2016-06
Language
English
Article Type
Article
Keywords

TANDEM SOLAR-CELL; ELECTRON FLOW; INTERNAL PHOTOEMISSION; LAYER GRAPHENE; DIRAC POINT; INTERFACE; ENERGY; EFFICIENCY; SCATTERING; CONVERSION

Citation

SCIENTIFIC REPORTS, v.6

ISSN
2045-2322
DOI
10.1038/srep27549
URI
http://hdl.handle.net/10203/210177
Appears in Collection
EEW-Journal Papers(저널논문)
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