DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Kim, Sung Kyu | ko |
dc.contributor.author | Kim, Jong Yun | ko |
dc.contributor.author | Koo, Beom Jun | ko |
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Yang, Sang Yoon | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2016-07-07T05:37:43Z | - |
dc.date.available | 2016-07-07T05:37:43Z | - |
dc.date.created | 2016-05-18 | - |
dc.date.created | 2016-05-18 | - |
dc.date.created | 2016-05-18 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.20, pp.12951 - 12958 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209842 | - |
dc.description.abstract | Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity,, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 10(7), stable retention time for 10(5) s, excellent cycling endurance over 10(5) cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000376825800048 | - |
dc.identifier.scopusid | 2-s2.0-84973580298 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 20 | - |
dc.citation.beginningpage | 12951 | - |
dc.citation.endingpage | 12958 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.6b01937 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Kim, Jong Yun | - |
dc.contributor.nonIdAuthor | Koo, Beom Jun | - |
dc.contributor.nonIdAuthor | Choi, Junhwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | polymer RRAM | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition (iCVD) | - |
dc.subject.keywordAuthor | highly cross-linked-polymer | - |
dc.subject.keywordAuthor | Cu filament | - |
dc.subject.keywordAuthor | flexible memory | - |
dc.subject.keywordPlus | RESISTIVE MEMORY | - |
dc.subject.keywordPlus | SWITCHING CHARACTERISTICS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | FILAMENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSITION | - |
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