DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Yong | ko |
dc.contributor.author | Goh, Wang Ling | ko |
dc.contributor.author | Chai, Kevin T. -C. | ko |
dc.contributor.author | Mu, Xiaojing | ko |
dc.contributor.author | Hong, Yan | ko |
dc.contributor.author | Kropelnicki, Piotr | ko |
dc.contributor.author | Je, Minkyu | ko |
dc.date.accessioned | 2016-07-07T04:57:28Z | - |
dc.date.available | 2016-07-07T04:57:28Z | - |
dc.date.created | 2016-06-13 | - |
dc.date.created | 2016-06-13 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | REVIEW OF SCIENTIFIC INSTRUMENTS, v.87, no.4 | - |
dc.identifier.issn | 0034-6748 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209745 | - |
dc.description.abstract | The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid pi-type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators. Published by AIP Publishing | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Parasitic analysis and pi-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations | - |
dc.type | Article | - |
dc.identifier.wosid | 000375842500055 | - |
dc.identifier.scopusid | 2-s2.0-84968735420 | - |
dc.type.rims | ART | - |
dc.citation.volume | 87 | - |
dc.citation.issue | 4 | - |
dc.citation.publicationname | REVIEW OF SCIENTIFIC INSTRUMENTS | - |
dc.identifier.doi | 10.1063/1.4945801 | - |
dc.contributor.localauthor | Je, Minkyu | - |
dc.contributor.nonIdAuthor | Wang, Yong | - |
dc.contributor.nonIdAuthor | Goh, Wang Ling | - |
dc.contributor.nonIdAuthor | Chai, Kevin T. -C. | - |
dc.contributor.nonIdAuthor | Mu, Xiaojing | - |
dc.contributor.nonIdAuthor | Hong, Yan | - |
dc.contributor.nonIdAuthor | Kropelnicki, Piotr | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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