High Performance Top-Gated Graphene Field Effect Transistors with Initiated Chemical Vapor Deposition Gate Dielectrics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오중건 | - |
| dc.contributor.author | 박관용 | - |
| dc.contributor.author | 김충선 | - |
| dc.contributor.author | 임성갑 | - |
| dc.contributor.author | 조병진 | - |
| dc.date.accessioned | 2016-07-06T02:43:24Z | - |
| dc.date.available | 2016-07-06T02:43:24Z | - |
| dc.date.created | 2016-06-13 | - |
| dc.date.issued | 2016-04-15 | - |
| dc.identifier.citation | The 3rd Korean Graphene Symposium | - |
| dc.identifier.uri | http://hdl.handle.net/10203/209409 | - |
| dc.language | Korean | - |
| dc.publisher | 한국그래핀연구회 | - |
| dc.title | High Performance Top-Gated Graphene Field Effect Transistors with Initiated Chemical Vapor Deposition Gate Dielectrics | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 3rd Korean Graphene Symposium | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 부여 롯데리조트 | - |
| dc.contributor.localauthor | 오중건 | - |
| dc.contributor.localauthor | 박관용 | - |
| dc.contributor.localauthor | 김충선 | - |
| dc.contributor.localauthor | 임성갑 | - |
| dc.contributor.localauthor | 조병진 | - |
- Appears in Collection
- CBE-Conference Papers(학술회의논문)EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.