DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Kang, Min-Ho | ko |
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2016-07-05T08:19:00Z | - |
dc.date.available | 2016-07-05T08:19:00Z | - |
dc.date.created | 2016-05-31 | - |
dc.date.created | 2016-05-31 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.541 - 544 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209322 | - |
dc.description.abstract | A comprehensive analysis of the gate-induced drain leakage (GIDL) current of vertically stacked nanowire (VS-NW) FETs was carried out. In particular, two different operational modes of the VS-NW, an inversion mode (IM) and a junctionless mode (JM), were compared. The GIDL current of the JM-FET was considerably smaller than that of the IM-FET, and the reason for the difference was consequently determined by numerical simulations. It was found that the source of the difference between the IM-FET and JM-FET was the difference in source/drain (S/D) doping concentration, where the depletion width becomes the tunneling width, considering a long extension length at the S/D regions. The experimental results showed that the GIDL current of the NW FET was significantly controlled by longitudinal band-to-band tunneling (BTBT), rather than the transverse BTBT, as had been reported in the previous literature | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSISTORS | - |
dc.subject | FINFET | - |
dc.title | Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode | - |
dc.type | Article | - |
dc.identifier.wosid | 000374868300004 | - |
dc.identifier.scopusid | 2-s2.0-84964608073 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 541 | - |
dc.citation.endingpage | 544 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2016.2540645 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kang, Min-Ho | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Band-to-band tunneling (BTBT) | - |
dc.subject.keywordAuthor | gate-all-around (GAA) | - |
dc.subject.keywordAuthor | gate-induced drain leakage (GIDL) | - |
dc.subject.keywordAuthor | inversion-mode (IM) FET | - |
dc.subject.keywordAuthor | junctionless-mode (JM) FET | - |
dc.subject.keywordAuthor | short-channel effect (SCE) | - |
dc.subject.keywordAuthor | vertically stacked nanowire (VS-NW) | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | FINFET | - |
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