DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hangil | ko |
dc.contributor.author | Kim, Soo-Hyun | ko |
dc.contributor.author | Ko, Kyung Yong | ko |
dc.contributor.author | Kim, Hyungjun | ko |
dc.contributor.author | Kim, Jaehoon | ko |
dc.contributor.author | Oh, Jihun | ko |
dc.contributor.author | Lee, Han-Bo-Ram | ko |
dc.date.accessioned | 2016-07-05T08:17:45Z | - |
dc.date.available | 2016-07-05T08:17:45Z | - |
dc.date.created | 2016-05-31 | - |
dc.date.created | 2016-05-31 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | ELECTRONIC MATERIALS LETTERS, v.12, no.3, pp.404 - 410 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209306 | - |
dc.description.abstract | A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140A degrees C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of similar to 7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure | - |
dc.language | English | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array | - |
dc.type | Article | - |
dc.identifier.wosid | 000375053100012 | - |
dc.identifier.scopusid | 2-s2.0-84964701677 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 404 | - |
dc.citation.endingpage | 410 | - |
dc.citation.publicationname | ELECTRONIC MATERIALS LETTERS | - |
dc.identifier.doi | 10.1007/s13391-016-5356-2 | - |
dc.contributor.localauthor | Oh, Jihun | - |
dc.contributor.nonIdAuthor | Kim, Hangil | - |
dc.contributor.nonIdAuthor | Kim, Soo-Hyun | - |
dc.contributor.nonIdAuthor | Ko, Kyung Yong | - |
dc.contributor.nonIdAuthor | Kim, Hyungjun | - |
dc.contributor.nonIdAuthor | Kim, Jaehoon | - |
dc.contributor.nonIdAuthor | Lee, Han-Bo-Ram | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Si nanowires | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | Si/Cu2O heterojunction | - |
dc.subject.keywordAuthor | photodiode | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | OXIDE CU2O | - |
dc.subject.keywordPlus | POWER | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.