Atomistic Simulation of InAs Tunnel FETs based on TB-NEGF Method
- Publisher
- 성균관대학교,한국반도체산업협회,한국반도체연구조합
- Issue Date
- 2016-02-23
- Language
- English
- Citation
제23회 반도체 학술대회
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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