Simulation Study of Double-Gate Tunnel Dielectric-based Tunnel FET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박상천 | ko |
| dc.contributor.author | 서준범 | ko |
| dc.contributor.author | 정우진 | ko |
| dc.contributor.author | 신민철 | ko |
| dc.date.accessioned | 2016-07-05T08:04:37Z | - |
| dc.date.available | 2016-07-05T08:04:37Z | - |
| dc.date.created | 2016-06-03 | - |
| dc.date.issued | 2016-02-23 | - |
| dc.identifier.citation | 제23회 반도체 학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/209268 | - |
| dc.language | English | - |
| dc.publisher | 성균관대학교,한국반도체산업협회,한국반도체연구조합 | - |
| dc.title | Simulation Study of Double-Gate Tunnel Dielectric-based Tunnel FET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제23회 반도체 학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원리조트 | - |
| dc.contributor.localauthor | 신민철 | - |
| dc.contributor.nonIdAuthor | 박상천 | - |
| dc.contributor.nonIdAuthor | 서준범 | - |
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