Interface engineering by inserting multilayer graphene barrier electrode for low power and highly uniform polymer nonvolatile memory

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dc.contributor.authorJang, Byung Chulko
dc.contributor.authorSeong, Hyejeongko
dc.contributor.authorKim, Jong Yunko
dc.contributor.authorKoo, Beom Junko
dc.contributor.authorKim, Sung Kyuko
dc.contributor.authorYang, Sang Yoonko
dc.contributor.authorIm, Sung Gapko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2016-07-05T08:03:36Z-
dc.date.available2016-07-05T08:03:36Z-
dc.date.created2016-05-02-
dc.date.created2016-05-02-
dc.date.issued2016-04-21-
dc.identifier.citationGraphene 2016-
dc.identifier.urihttp://hdl.handle.net/10203/209258-
dc.languageEnglish-
dc.publisherGraphene 2016-
dc.titleInterface engineering by inserting multilayer graphene barrier electrode for low power and highly uniform polymer nonvolatile memory-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameGraphene 2016-
dc.identifier.conferencecountryIT-
dc.identifier.conferencelocationGenoa’s Conference Center-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorJang, Byung Chul-
dc.contributor.nonIdAuthorSeong, Hyejeong-
dc.contributor.nonIdAuthorKim, Jong Yun-
dc.contributor.nonIdAuthorKoo, Beom Jun-
dc.contributor.nonIdAuthorKim, Sung Kyu-
dc.contributor.nonIdAuthorYang, Sang Yoon-
dc.contributor.nonIdAuthorIm, Sung Gap-
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EE-Conference Papers(학술회의논문)
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