Multilevel Resistive Switching Memory based on Two-dimensional materials using Simple solution process
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Gwang Hyuk | ko |
| dc.contributor.author | Kim, Choong-Ki | ko |
| dc.contributor.author | Bang, Gyeong Sook | ko |
| dc.contributor.author | Jang, Byung Chul | ko |
| dc.contributor.author | Woo, Myung Hun | ko |
| dc.contributor.author | Choi, Yang Kyu | ko |
| dc.contributor.author | Choi, Sung-Yool | ko |
| dc.date.accessioned | 2016-07-05T08:03:29Z | - |
| dc.date.available | 2016-07-05T08:03:29Z | - |
| dc.date.created | 2016-05-02 | - |
| dc.date.created | 2016-05-02 | - |
| dc.date.issued | 2016-04-21 | - |
| dc.identifier.citation | Graphene 2016 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/209257 | - |
| dc.language | English | - |
| dc.publisher | Graphene 2016 | - |
| dc.title | Multilevel Resistive Switching Memory based on Two-dimensional materials using Simple solution process | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Graphene 2016 | - |
| dc.identifier.conferencecountry | IT | - |
| dc.identifier.conferencelocation | Genoa’s Conference Center | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Choi, Sung-Yool | - |
| dc.contributor.nonIdAuthor | Shin, Gwang Hyuk | - |
| dc.contributor.nonIdAuthor | Bang, Gyeong Sook | - |
| dc.contributor.nonIdAuthor | Jang, Byung Chul | - |
| dc.contributor.nonIdAuthor | Woo, Myung Hun | - |
| dc.contributor.nonIdAuthor | Choi, Yang Kyu | - |
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